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NIF9N05CL, NIF9N05ACL
TYPICAL PERFORMANCE CURVES
500
C iss
400 V DS = 0 V
V GS = 0 V
T J = 25 ° C
5
4
V DS
Q GS
Q T
Q GD
V GS
50
40
300
200
C rss
C iss
3
2
30
20
100
0
10
5
V GS
0
V DS
5
10
15
20
25
C oss
C rss
30
35
1
0
0
1
I D = 2.6 A
T J = 25 ° C
2 3 4
Q G , TOTAL GATE CHARGE (nC)
5
10
0
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate ? to ? Source Voltage vs. Total
Gate Charge
100000
10000
1000
100
V DD = 40 V
I D = 2.6 A
V GS = 10 V
t d(off)
t f
t r
t d(on)
3
2
1
V GS = 0 V
T J = 25 ° C
10
1
10
100
0
0.5
0.6
0.7
0.8
0.9
1
R G , GATE RESISTANCE ( W )
Figure 9. Resistance Switching Time Variation
vs. Gate Resistance
ORDERING INFORMATION
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
NIF9N05CLT1
NIF9N05CLT1G
NIF9N05ACLT1G
NIF9N05CLT3
NIF9N05CLT3G
NIF9N05ACLT3G
Device
Package
SOT ? 223
SOT ? 223
(Pb ? Free)
SOT ? 223
SOT ? 223
(Pb ? Free)
Shipping ?
1000 / Tape & Reel
4000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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